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MCR716, MCR718
Preferred Device
Sensitive Gate Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer applications such as motor control, process control, temperature, light and speed control.
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* * * * * *
Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Surface Mount Lead Form - Case 369C Epoxy Meets UL 94, V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V
SCRs 4.0 AMPERES RMS 400 - 600 VOLTS
G A K
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) MCR716 MCR718 On-State RMS Current (180 Conduction Angles; TC = 90C) Average On-State Current (180 Conduction Angles; TC = 90C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110C) Circuit Fusing Consideration (t = 8.3 msec) Forward Peak Gate Power (Pulse Width 1.0 msec, TC = 90C) Forward Average Gate Power (t = 8.3 msec, TC = 90C) Forward Peak Gate Current (Pulse Width 1.0 msec, TC = 90C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 IT(RMS) IT(AV) ITSM 4.0 2.6 25 A A A 1 I2t PGM PG(AV) IGM TJ Tstg 2.6 0.5 0.1 0.2 -40 to +110 -40 to +150 A2sec W W A C C 2 3 4 Y WW x = Year = Work Week = 6 or 8 Value Unit V 12 3 4 DPAK CASE 369C STYLE 4
MARKING DIAGRAM
YWW MC R71x
PIN ASSIGNMENT
Cathode Anode Gate Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
(c) Semiconductor Components Industries, LLC, 2004
1
August, 2004 - Rev. 4
Publication Order Number: MCR716/D
MCR716, MCR718
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol RqJC RqJA TL Max 3.0 80 260 Unit C/W C/W C
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current; RGK = 1 kW (Note 3) (VAK = Rated VDRM or VRRM) TC = 25C TC = 110C ON CHARACTERISTICS Peak Reverse Gate Blocking Voltage (IGR = 10 mA) Peak Reverse Gate Blocking Current (VGR = 10 V) Peak Forward On-State Voltage (Note 4) (ITM = 5.0 A Peak) (ITM = 8.2 A Peak) Gate Trigger Current (Continuous dc) (Note 5) (VD = 12 Vdc, RL = 30 Ohms) Gate Trigger Voltage (Continuous dc) (Note 5) (VD = 12 Vdc, RL = 30 Ohms) TC = 25C TC = -40C VGT TC = 25C TC = -40C TC = 110C IH TC = 25C TC = -40C IL - - tgt - - - 2.0 5.0 10 5.0 ms 0.4 - 1.0 - 5.0 10 mA 0.3 - 0.2 0.55 - - 0.8 1.0 - mA VRGM IRGM VTM - - IGT 1.0 - 25 - 75 300 V 1.3 1.5 1.5 2.2 mA 10 - 12.5 - 18 1.2 V mA V IDRM IRRM mA - - - - 10 200 Symbol Min Typ Max Unit
Holding Current (Note 3) (VD = 12 Vdc, Initiating Current = 200 mA, Gate Open) Latching Current (Note 3) (VD = 12 Vdc, IG = 2.0 mA, TC = 25C) (VD = 12 Vdc, IG = 2.0 mA, TC = -40C)
Total Turn-On Time (Source Voltage = 12 V, RS = 6 kW, IT = 8 A(pk), RGK = 1 kW) (VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 ms) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = 0.67 x Rated VDRM, RGK = 1 kW, Exponential Waveform, TJ = 110C) Repetitive Critical Rate of Rise of On-State Current (f = 60 Hz, IPK = 30 A, PW = 100 ms, dIG/dt = 1 A/ms)
dv/dt
5.0
10
-
V/ms
di/dt
-
-
100
A/ms
2. Case 369C, when surface mounted on minimum recommended pad size. 3. Ratings apply for negative gate voltage or RGK = 1 kW. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 4. Pulse Test: Pulse Width 2 ms, Duty Cycle 2%. 5. RGK current not included in measurements.
ORDERING INFORMATION
Device MCR716T4 MCR718T4 Package DPAK DPAK Shipping 16 mm Tape & Reel (2.5 k / Reel) 16 mm Tape & Reel (2.5 k / Reel)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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MCR716, MCR718
Voltage Current Characteristic of SCR
+ Current Anode + VTM on state IRRM at VRRM IH
Symbol
VDRM IDRM VRRM IRRM VTM IH
Parameter
Peak Repetitive Off-State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off-State Reverse Voltage Peak Reverse Blocking Current Peak On-State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode -
+ Voltage IDRM at VDRM Forward Blocking Region (off state)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
P(AV), AVERAGE POWER DISSIPATION (WATTS)
110
5.0 4.0 3.0 2.0 1.0 0 30C 60C 90C 120C 180C DC
30C
105
60C 90C 120C 180C
DC
100
95
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
Figure 1. Average Current Derating
Figure 2. On-State Power Dissipation
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
Typical @ TJ = 25C Maximum @ TJ = 110C
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
100
1.0
10
ZqJC(t) = RqJC(t)*r(t)
Maximum @ TJ = 25C 1.0
0.1
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.01
0.1
1.0
10
100
1000
10,000
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
t, TIME (ms)
Figure 3. On-State Characteristics
Figure 4. Transient Thermal Response
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MCR716, MCR718
35 I GT, GATE TRIGGER CURRENT ( m A) 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) -20 20 40 60 80 100 110
30
25
0.5
20
15 -40
0
0
-40
-20
0
20
40
60
80
100 110
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 5. Typical Gate Trigger Current versus Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus Junction Temperature
2.0
2.0
IH , HOLDING CURRENT (mA)
1.5
IL , LATCHING CURRENT (mA) -20 0 20 40 60 80 100 110
1.5
1.0
1.0
0.5
0.5
0 -40
0 -40
-20
0
20
40
60
80
100 110
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 7. Typical Holding Current versus Junction Temperature
Figure 8. Typical Latching Current versus Junction Temperature
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MCR716, MCR718
PACKAGE DIMENSIONS
DPAK CASE 369C ISSUE O
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 ---
-T- B V R
4
C E
A S
1 2 3
Z U
K F L D G
2 PL
J H 0.13 (0.005)
M
T
DIM A B C D E F G H J K L R S U V Z
STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE
SOLDERING FOOTPRINT
6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118
SCALE 3:1
mm inches
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MCR716, MCR718
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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MCR716/D

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